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Spin orientation by optical pumping in strained InxGa1−xAs/GaAs quantum wells

✍ Scribed by F. Hassen; G. Bacquet; N. Lauret; J. Barrau; L.K. Howard; D.J. Dunstan

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 286 KB
Volume: 87
Category: Article
ISSN: 0038-1098
DOI: 10.1016/0038-1098(93)90723-z

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In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol