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Hot carrier photoluminescence from strained InxGa1−xAs/GaAs single quantum wells

✍ Scribed by T.G. Andersson; Z.-G. Chen; Z.-Y. Xu; J.-Z. Xu; W.-K. Ge

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 359 KB
Volume: 95
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(89)90386-2

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In this study the influence of the interface morphology upon the photoluminescence of thick InGaAs/GaAs strained quantum wells has been investigated. Samples grown by molecular beam epitaxy, using GaAs (001) substrates with a miscut of 6 towards (111)A, have been studied using low temperature photol