✦ LIBER ✦

Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) for integrated spin electronics

✍ Scribed by Sugahara, S.

Book ID: 114448055
Publisher: The Institution of Electrical Engineers
Year: 2005
Tongue: English
Weight: 315 KB
Volume: 152
Category: Article
ISSN: 1350-2409
DOI: 10.1049/ip-cds:20045196

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-quality nano spin-oxide for possibl

High-quality nano spin-oxide for possible applications in metal??oxide semiconductor field-effect transistor

✍ Wen-Tse Chang; Gwo-Huei Yang; Jun-Dar Hwang; Jun-Hung Lin 📂 Article 📅 2011 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 218 KB

Organic field-effect transistors for spi

Organic field-effect transistors for spin-polarized transport

✍ Michelfeit, M. ;Schmidt, G. ;Geurts, J. ;Molenkamp, L. W. 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 348 KB

## Abstract In order to combine the merits of the rapidly developing fields of spintronics and organic electronics, we present a concept of an organic field‐effect transistor (OFET) for spin‐polarized transport, enabling a non‐volatile activation and deactivation by magnetic field pulses. This new

Achieving Highly Localized Effective Mag

Achieving Highly Localized Effective Magnetic Fields With Non-Uniform Rashba Spin-Orbit Coupling for Tunable Spin Current in Metal/Semiconductor/Metal Structures

✍ Fujita, T.; Jalil, M.B.A.; Seng Ghee Tan 📂 Article 📅 2010 🏛 IEEE 🌐 English ⚖ 365 KB

The effect of divalent metal binding on

The effect of divalent metal binding on the electron spin resonance spectra of spin-labeled actin. Evidence for spin-spin interactions involving manganese (II)

✍ R.W. Burley; J.C. Seidel; J. Gergely 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Forming semiconductor/dielectric double

Forming semiconductor/dielectric double layers by one-step spin-coating for enhancing the performance of organic field-effect transistors

✍ Chuan Liu; Yun Li; Takeo Minari; Kazuo Takimiya; Kazuhito Tsukagoshi 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 947 KB

Experimental study on isolation edge eff

Experimental study on isolation edge effects in the short channel characteristics of metal oxide semiconductor field effect transistors (MOSFETs)

✍ Toshiyuki Oishi; Katsuomi Shiozawa; Akihiko Furukawa; Yuji Abe; Yasunori Tokuda; 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 265 KB

We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati