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Spin lifetimes and g-factor tuning in Si/SiGe quantum wells

✍ Scribed by W Jantsch; Z Wilamowski; N Sandersfeld; M Mühlberger; F Schäffler


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
75 KB
Volume
13
Category
Article
ISSN
1386-9477

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A detailed study of the polarization dependence of subband absorption and photoconductivity in pseudomorphic p-type Si/Si 0.64 Ge 0.36 quantum wells is presented. The fabricated quantum well infrared photodetectors (QWIP) show a photoresponse between 3 and 8 µm with a peak-wavelength of λ p = 5 µm u