Spin lifetime measurements in GaAsBi thin films
β Scribed by Pursley, Brennan; Luengo-Kovac, M.; Vardar, G.; Goldman, R. S.; Sih, V.
- Book ID
- 118277682
- Publisher
- American Institute of Physics
- Year
- 2013
- Tongue
- English
- Weight
- 641 KB
- Volume
- 102
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
Electron spin relaxation times in excess of the localized limit have been measured in MBE n-GaAs layers, with the times depending on the doping concentration. We have optically oriented the electrons in the samples, and measured spin lifetimes via luminescence depolarization in a transverse magnetic
This paper describes the results of two complementary experiments which studied the properties of the well-deformed nucleus 171 Hf. The first experiment, with a thin self-supporting target, extended the rotational bands built upon the [633]7/2, [512]5/2 and [521]1/2 configurations up to spins of 73/