Low-spin lifetime measurements in
✍ Scribed by Valiente-Dobón, J. J.; Svensson, C. E.; Afanasjev, A. V.; Ragnarsson, I.; Andreoiu, C.; Appelbe, D. E.; Austin, R. A. E.; Ball, G. C.; Cameron, J. A.; Carpenter, M. P.; Clark, R. M.; Cromaz, M.; Dashdorj, D.; Fallon, P.; Freeman, S. J.; Garrett, P. E.; Görgen, A.; Grinyer, G. F.; Hodgson, D. F.; Hyland, B.; Jenkins, D.; Johnston-Theasby, F.; Joshi, P.; Kelsall, N. S.; Macchiavelli, A. O.; Mengoni, D.; Moore, F.; Mukherjee, G.; Phillips, A. A.; Reviol, W.; Sarantites, D.; Schumaker, M. A.; Seweryniak, D.; Smith, M. B.; Waddington, J. C.; Wadsworth, R.; Ward, D.
- Book ID
- 125437960
- Publisher
- The American Physical Society
- Year
- 2008
- Tongue
- English
- Weight
- 205 KB
- Volume
- 77
- Category
- Article
- ISSN
- 0556-2813
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Electron spin relaxation times in excess of the localized limit have been measured in MBE n-GaAs layers, with the times depending on the doping concentration. We have optically oriented the electrons in the samples, and measured spin lifetimes via luminescence depolarization in a transverse magnetic
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