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Spin-dependent recombination in GaAsN solid solutions

โœ Scribed by V. K. Kalevich; E. L. Ivchenko; M. M. Afanasiev; A. Yu. Shiryaev; A. Yu. Egorov; V. M. Ustinov; B. Pal; Y. Masumoto


Book ID
110144815
Publisher
SP MAIK Nauka/Interperiodica
Year
2005
Tongue
English
Weight
64 KB
Volume
82
Category
Article
ISSN
0021-3640

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Hanle effect and spin-dependent recombin
โœ V.K. Kalevich; A.Yu. Shiryaev; E.L. Ivchenko; M.M. Afanasiev; A.Yu. Egorov; V.M. ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 258 KB

The peculiarities of Hanle effect (i.e., the depolarization of edge photoluminescence in a transverse magnetic field) in semiconductors, brought about by spin-dependent recombination of free electrons with deep paramagnetic centers, have been investigated in GaAs 0.979 N 0.021 alloy at room temperat