Hanle effect and spin-dependent recombin
โ
V.K. Kalevich; A.Yu. Shiryaev; E.L. Ivchenko; M.M. Afanasiev; A.Yu. Egorov; V.M.
๐
Article
๐
2009
๐
Elsevier Science
๐
English
โ 258 KB
The peculiarities of Hanle effect (i.e., the depolarization of edge photoluminescence in a transverse magnetic field) in semiconductors, brought about by spin-dependent recombination of free electrons with deep paramagnetic centers, have been investigated in GaAs 0.979 N 0.021 alloy at room temperat