Hanle effect and spin-dependent recombination at deep centers in GaAsN

✍ Scribed by V.K. Kalevich; A.Yu. Shiryaev; E.L. Ivchenko; M.M. Afanasiev; A.Yu. Egorov; V.M. Ustinov; Y. Masumoto

• Book ID: 103887771
• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 258 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.234

✦ Synopsis

The peculiarities of Hanle effect (i.e., the depolarization of edge photoluminescence in a transverse magnetic field) in semiconductors, brought about by spin-dependent recombination of free electrons with deep paramagnetic centers, have been investigated in GaAs 0.979 N 0.021 alloy at room temperature. The measured Hanle curve consists of narrow and wide parts with the widths at the half-height being $ 100 and $ 120000 G. The difference between the widths by three orders of magnitude results from strongly differing spin lifetimes of bound and free electrons, T sc and T s . Using g-factor values +2 and +1 for bound and free electrons, respectively, we have found that T sc E700 ps and T s E2 ps. Thus obtained values of T sc and T s allow us to describe theoretically the experimental Hanle curve as well as its dependence on the pump intensity.