## Abstract In this work we characterized two bidimensional gratings consisting each of a square array of square holes etched in a photoresist layer deposited on silicon. Data were taken on both samples with a spectroscopic UVβVIS ellipsometer (SE) operated at 70Β° incidence and zero azimuth (with t
β¦ LIBER β¦
Spectroscopic ellipsometry on lamellar gratings
β Scribed by R. Antos; I. Ohlidal; J. Mistrik; K. Murakami; T. Yamaguchi; J. Pistora; M. Horie; S. Visnovsky
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 351 KB
- Volume
- 244
- Category
- Article
- ISSN
- 0169-4332
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The wide applicability of spectroscopic ellipsometry (S/z) to characterize non-destructively silicon-on-insulator materials is illustrated with a number of case studies. SE allows the determination of not only the optical properties of single layers as a fimction of the wavelength but also their thi