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Spectroscopic and SEM investigations of porous silicon doped with dyes

✍ Scribed by Anna Bruska; Andrei Chernook; Michael Hietschold; Christian von Borczyskowski


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
423 KB
Volume
102
Category
Article
ISSN
0169-4332

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## Abstract Tin dioxide doped with antimony (SnO~2~:Sb) and sol–gel doped with terbium (Tb^3+^) were deposited on porous silicon (PS) layers and on monocrystalline Si wafers. Energy dispersive X‐ray (EDX) analysis and Auger electron spectroscopy (AES) show the presence of tin, oxygen and terbium i