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Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

✍ Scribed by K. D. Moiseev; Ya. A. Parkhomenko; E. V. Gushchina; A. V. Ankudinov; V. P. Mikhailova; N. A. Bert; Yu. P. Yakovlev

Book ID
111444417
Publisher
Springer
Year
2009
Tongue
English
Weight
281 KB
Volume
43
Category
Article
ISSN
1063-7826

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## Abstract In this study, we have attempted a growth of InSb film on the cost‐effective, (001)‐Si substrate inserting a thin intermediate‐layer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subs