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Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces

✍ Scribed by Yu. B. Samsonenko; G. É. Cirlin; V. A. Egorov; N. K. Polyakov; V. P. Ulin; V. G. Dubrovskii

Book ID
111444179
Publisher
Springer
Year
2008
Tongue
English
Weight
602 KB
Volume
42
Category
Article
ISSN
1063-7826

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