Special issue on silicon-germanium alloys

• Book ID: 104631870
• Publisher: Springer US
• Year: 1995
• Tongue: English
• Weight: 37 KB
• Volume: 6
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00125879

✦ Synopsis

Editorial Special Issue on Silicon-Germanium Alloys

I have enjoyed assembling this special issue of this journal on SiGe and I am grateful for the invitation to do so. In selecting the authors and topics I have tried to produce a timely and authoritive account of the current status of this important materials system. The first two papers are reviews on the material properties and device prospects of Si-Ge strained layer structures and a much needed overview of the bulk growth of SiGe. These are followed by two papers on the stability of strain and interfaces with thermal exposure. The genuinely exciting prospects for SiGe enhancing and extending silicon technologies have provided enormous motivation for researchers across the world. Much of their efforts have focused on actual devices notably the heterojunction bipolar transistor, and now that |his device is well established, there is an increasing emphasis on field effect transistors. In addition the realisation of a silicon based optoelectronics technology would be a major prize there is intense activity in the investigation of the light emitting possibilities of two, one and zero dimensional Si-Ge structures. The remaining and major part of this issue deals with these aspects with an appropriate materials emphasis, as is apt for this journal.