Special features of photoluminescence in silicon-on-insulator structures implanted with hydrogen ions
β Scribed by I. E. Tyschenko; K. S. Zhuravlev; A. B. Talochkin; V. P. Popov
- Book ID
- 111443503
- Publisher
- Springer
- Year
- 2006
- Tongue
- English
- Weight
- 204 KB
- Volume
- 40
- Category
- Article
- ISSN
- 1063-7826
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π SIMILAR VOLUMES
Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 β’ 10 17 , 2.5 β’ 10 17 and 5 β’ 10 17 ions cm Γ2 sequentially in the ratio 1:1 at 150 keV into p-type
Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were