Spatially selective excitation of shallow acceptors in GaAs/AlxGa1−xAs quantum wells

✍ Scribed by G.C. Rune; P.O. Holtz; B. Monemar; M. Sundaram; J.L. Merz; A.C. Gossard

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 431 KB
• Volume: 7
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/0749-6036(90)90119-r

✦ Synopsis

The transitions from the ground state, ls, to the first excited state, 2s, of the Be acceptor confined at different positions in 96/~ wide GaAs/AlxGal_xAs quantum wells (QWs) have been studied via resonant Raman scattering (RRS) of the acceptor bound exciton (BE). Selective excitation at different resonant positions within the finite line width of the acceptor BE gives rise to an image of the distribution of acceptor transition energies corresponding to the spatial variation of the acceptor transition energies within the dopant layer. The dependence of the line width of the RRS peaks is derived from the BE binding energy and the ls---~2s acceptor transition energy and acceptor position,z0, in the QW. The line widths are almost constant from the center to roughly z0=35 where the line widths starts to increase dramatically.