Cd diffusion in In0.53Ga0.47As
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P. AmbrΓ©e; Dr. B. Gruska
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Article
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1989
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John Wiley and Sons
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English
β 462 KB
Diffusion experiments of Cd in VPE-InGaAs, lattice matched to InP, are reported. The closed ampoule technique used makes i t possible t o discuss the thermodynamics of the diffusion system consisting of the semiconductor samples, Cd,As, as compound source and additional In or GaAs powder t o prevent