Growth of gallium antimonide epitaxial l
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Dr. L. D. Pramatarova; Dr. D. N. Tretjakov
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Article
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1981
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John Wiley and Sons
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English
โ 347 KB
๐ 2 views
## Abstract In the present work the possibility is demonstrated of growing gallium antimonide epitaxial layers on indium arsenide substrates using the liquid phase epitaxial (LPE) method. The influence is nivestigated of the growth conditions on the morphology of the surface and interface of the e