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Some practical remarks on the design of experimental systems for expitaxial growth of Si, Ge and SiGe

✍ Scribed by H. Aharoni; A. Bar-Lev

Publisher: Elsevier Science
Year: 1974
Tongue: English
Weight: 543 KB
Volume: 24
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(74)90061-x

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