Some electrical properties of the semico
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M.R. Lorenz; J.F. Woods; R.J. Gambino
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Article
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1967
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Elsevier Science
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English
⚖ 177 KB
## Ah&act-The wide-band gap semiconductor @-GasOs has an electron mobility of the order of 100 cm"/V-set at room temperature. Single crystals grown under reducing conditions have about 2 x lo'\* free carriers, apparently due to anion vacancies.