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Electrical properties of β-Ga2O3 single crystals

✍ Scribed by T. Harwig; G.J. Wubs; G.J. Dirksen

Publisher
Elsevier Science
Year
1976
Tongue
English
Weight
272 KB
Volume
18
Category
Article
ISSN
0038-1098

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📜 SIMILAR VOLUMES

Some electrical properties of the semico
Some electrical properties of the semiconductor βGa2O3
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## Ah&act-The wide-band gap semiconductor @-GasOs has an electron mobility of the order of 100 cm"/V-set at room temperature. Single crystals grown under reducing conditions have about 2 x lo'\* free carriers, apparently due to anion vacancies.

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Czochralski growth and characterization of β-Ga2O3 single crystals
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## Abstract Transparent semiconducting β‐Ga~2~O~3~ single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga~2~O~3~. Thermodynamic calculations on different atmospheres containing CO~2~,