✦ LIBER ✦

Some applications of elastic peak electron spectroscopy for semiconductor surface studies

✍ Scribed by Bideux, L.; Robert, C.; Merle, S.; Gruzza, B.; Goumet, E.; Gil-Lafon, E.

Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 101 KB
Volume: 26
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199811)26:12<903::aid-sia436>3.0.co;2-1

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✦ Synopsis

The usefulness of elastic peak electron spectroscopy (EPES) has been demonstrated by application to a semiconductor study of indium phosphide or InAsP. In this paper, we present some results obtained with EPES. The inelastic mean free paths of indium phosphide have been calculated using EPES and the Monte-Carlo simulation or electron trajectories in solids. The second part of this work deals with the determination of the concentration of elements in heterostructures such as Au/InSb/InP(100) and and the results are compared to those InAs x P 1-x , obtained using AES.

John Wiley & Sons, Ltd.

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