Solution-processed polyfluorene–ZnO nanoparticles ambipolar light-emitting field-effect transistor

✍ Scribed by Andrey N. Aleshin; Igor P. Shcherbakov; Vasily N. Petrov; Alexander N. Titkov

• Book ID: 103877584
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 876 KB
• Volume: 12
• Category: Article
• ISSN: 1566-1199
• DOI: 10.1016/j.orgel.2011.04.017

✦ Synopsis

We report on a solution-processed polyfluorene (PFO)-ZnO nanoparticles composite light-emitting organic field-effect transistor (LE-OFET). The behavior of absorption, photoluminescence spectra and electroluminescence intensity of the PFO:ZnO hybrid films with different concentration of ZnO nanoparticles is analyzed. By changing the PFO/ZnO nanoparticles concentration ratio the PFO:ZnO OFET shows either unipolar or ambipolar behavior of current-voltage characteristics and operates in the hole/electron accumulation mode with current saturation behavior. The field effect mobility of charge carriers depends on the ZnO concentration. For the ambipolar PFO:ZnO OFET with modest PFO/ZnO nanoparticles ratio (1:0.2), well balanced electron and hole mobility values at 300 K are $0021 and $0029 cm 2 /Vs, respectively, whereas for films with high ZnO concentration (1:1) the mobility ($2 cm 2 /Vs) is close to that of polycrystalline ZnO. The ambipolar PFO:ZnO LE-OFET emits light at both positive and negative gate bias. The working mechanism of the PFO:ZnO LE-OFET is investigated.