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Solution processed IZTO thin film transistor on silicon nitride dielectric layer

✍ Scribed by Kim, Bong-Jin ;Kim, Hyung-Jun ;Yoon, Tae-Sik ;Kim, Yong-Sang ;Lee, Doo-Hyoung ;Choi, Youngmin ;Ryu, Byung-Hwan ;Lee, Hyun Ho


Book ID
108174195
Publisher
Elsevier
Year
2011
Tongue
English
Weight
441 KB
Volume
17
Category
Article
ISSN
1226-086X

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## Abstract The performance of top‐gate thin film transistors with solution processed zinc oxide (ZnO) channel layer and poly(4‐vinylphenol) (PVP) gate dielectric have been investigated. The transparency of the PVP film was more than 80% in the visible region, indicating that PVP can be used as a p