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Solution of a nonlinear Poisson’s equation for the potential of impurity ions in semiconductors with a spatially variable dielectric constant by an equivalent variational method

✍ Scribed by Mohammad, S. Noor

Book ID: 118218299
Publisher: The American Physical Society
Year: 1992
Tongue: English
Weight: 175 KB
Volume: 46
Category: Article
ISSN: 1098-0121
DOI: 10.1103/physrevb.46.13152

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## Abstract The primary purpose of the present paper consists in obtaining a correction to Dingle's potential for a (point) impurity ion (embedded) in Si or Ge. This goal is accomplished by making use of a variational principle in taking into account the effect of the spatial variation of the diele