A variational principle for the potential of impurity ions in semiconductors with spatially variable dielectric constants

A variational treatment of the potential

A variational treatment of the potential of impurity ions in semiconductors with spatially variable dielectric constants

✍ P. Csavinszky 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 258 KB

## Abstract The primary purpose of the present paper consists in obtaining a correction to Dingle's potential for a (point) impurity ion (embedded) in Si or Ge. This goal is accomplished by making use of a variational principle in taking into account the effect of the spatial variation of the diele