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Solid phase growth of silicon and germanium

✍ Scribed by J.C. Bourgoin; R. Asomoza


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
915 KB
Volume
69
Category
Article
ISSN
0022-0248

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Silicon-germanium/silicon (Sil\_xGex/Si, x<0.50) multiple quantum wells (MQWs) have been grown on (00 1) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane (Si2Hs) and germane (GeH4) as source gases. Their structural properties have been evaluated by X-ray diffraction (XRD), r