Epitaxial growth mode and silicon/silico
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J. M. Fernández; L. Hart; X. M. Zhang; M. H. Xie; J. Zhang; B. A. Joyce
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Article
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1996
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Springer US
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English
⚖ 483 KB
Silicon-germanium/silicon (Sil\_xGex/Si, x<0.50) multiple quantum wells (MQWs) have been grown on (00 1) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane (Si2Hs) and germane (GeH4) as source gases. Their structural properties have been evaluated by X-ray diffraction (XRD), r