The difference of soft error rates (SERs) in conventional bulk Si and silicon-on-insulator (SOI) static random access memories (SRAMs) with a technology node of 90 nm has been investigated by helium ion probes with energies ranging from 0.8 to 6.0 MeV and a dose of 75 ions/lm 2 . The SERs in the SOI
โฆ LIBER โฆ
Soft-error immunity evaluation of DRAM using high-energy nuclear microprobe
โ Scribed by H. Sayama; S. Hara; H. Andoh; H. Kimura; Y. Ohno; S. Satoh; M. Takai
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 312 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0167-9317
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