Soft breakdown at all positions along the N-MOSFET

✍ Scribed by B.E. Weir; M.A. Alam; P.J. Silverman

• Book ID: 104305631
• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 157 KB
• Volume: 59
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(01)00626-8

✦ Synopsis

We observe soft breakdowns at all positions along the gates of N-MOSFETs when testing is performed at low voltage or with low current compliance. Devices whose breakdown spots are at or near the gate-drain overlap region have the highest off-currents, although not high enough to be fatal to device operation.