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Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown

✍ Scribed by Vui-Lip Lo; Pey, K.-L.; Lim, W.-T.; Diing-Shenp Ang; Chih-Hang Tung


Book ID
114618487
Publisher
IEEE
Year
2006
Tongue
English
Weight
1005 KB
Volume
53
Category
Article
ISSN
0018-9383

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