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Snell's laws at the interface between nonlinear dielectrics

✍ Scribed by A.B. Aceves; J.V. Moloney; A.C. Newell


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
525 KB
Volume
129
Category
Article
ISSN
0375-9601

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Polycrystalline materials are important for a range of modern devices including CMOS transistors. There is a need to understand carrier generation and flow in such materials. Polysilicon TFTs are used to test a model based on generation in grain boundaries. When the generation is stimulated by the d