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Smooth diamond film deposition by a. c. discharge plasma chemical vapor deposition

โœ Scribed by S.Y. Choi; C.J. Zhang; G.S. Lee

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
406 KB
Volume
206
Category
Article
ISSN
0040-6090

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โœ J.L. Kaae; P.K. Gantzel; J. Chin; W.P. West ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 92 KB

We have investi ated the effects of reactant residence time on the properties of microwav+a88isted CV % diamond films. Using a constant process pressure of 40 Torr and gas composition of 1% CHb in Hr? the total gas flow rate was adjusted from 25 to 800 seem. For OUT reactor, this correspond8 to res