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Slow positron implantation spectroscopy of edge-defined film-fed growth silicon

✍ Scribed by P.G. Coleman; E. Bloss; S. Setzler; S. LaShell; Gordon Davies; W.D. Sawyer

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
297 KB
Volume
85
Category
Article
ISSN
0169-4332

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Edge-defined film-fed grown polycrystalline silicon sheets are known to contain carbon impurities in a state of extremely high supersaturation. During very rapid growth, carbon is incorporated with an unusually high effective segregation coefficient close to unity; therefore it is of interest to stu