Light confinement in 3D silicon doped wi
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F. Ouerghi; F. AbdelMalek; S. Haxha; M. Mejatty; H. Bouchriha; V. Haxha
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Article
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2006
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Elsevier Science
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English
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The numerical investigation of photonic band gaps (PBGs) for three-dimensional (3D) photonic crystals (PCs) of silicon doped with germanium (n-Si x Ge 1รx ) and silicon-on-insulator (SOI) structures has been illustrated. The effect of germanium-doping (Ge-doping) concentration on the vertical confin