Growth and Characterization of Direct-connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE High output power (above 3 mW/facet) AlGaAs/GaAs Transverse-Junction Stripe light emitting diodes have been grown on Semi-Insulating (100) GaAs substrates by Liquid Phase Epitaxy. These
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Size, position and direction control on GaAs and InAs nanowhisker growth
β Scribed by T. Shimada; K. Hiruma; M. Shirai; M. Yazawa; K. Haraguchi; T. Sato; M. Matsui; T. Katsuyama
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 170 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0749-6036
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