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Size-dependent characterization of embedded Ge nanocrystals: Structural and thermal properties

✍ Scribed by Araujo, L. L.; Giulian, R.; Sprouster, D. J.; Schnohr, C. S.; Llewellyn, D. J.; Kluth, P.; Cookson, D. J.; Foran, G. J.; Ridgway, M. C.

Book ID
120496143
Publisher
The American Physical Society
Year
2008
Tongue
English
Weight
698 KB
Volume
78
Category
Article
ISSN
1098-0121

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In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 Β°C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing