๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Six-parameter DC GaAs FET model for nonlinear circuit simulation

โœ Scribed by Cao, J.; Lin, F.; Kooi, P.S.; Leong, M.S.


Book ID
121758671
Publisher
The Institution of Electrical Engineers
Year
1997
Tongue
English
Weight
406 KB
Volume
33
Category
Article
ISSN
0013-5194

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


A new procedure for nonlinear statistica
โœ Francesco Centurelli; Alberto Di Martino; Giuseppe Scotti; Pasquale Tommasino; A ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 320 KB

A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been