Formation of poly-Si layers on AZO/ subs
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A. Okada; R. Sasaki; Y. Matsumoto; M. Takeisi; T. Saito; K. Toh; N. Usami; T. Su
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Article
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2011
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Elsevier
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English
โ 610 KB
AZO (Al: 2 wt %) films were deposited at 300 หC on fused silica substrates by the radio-frequency magnetron sputtering method under different sputtering pressures and at various sample positions in order to obtain the optimum sputtering condition for low-resistivity AZO films. It was found that the