โ Scribed by A. Okada; R. Sasaki; Y. Matsumoto; M. Takeisi; T. Saito; K. Toh; N. Usami; T. Suemasu
No coin nor oath required. For personal study only.
AZO (Al: 2 wt %) films were deposited at 300 หC on fused silica substrates by the radio-frequency magnetron sputtering method under different sputtering pressures and at various sample positions in order to obtain the optimum sputtering condition for low-resistivity AZO films. It was found that the resistivity of AZO films decreased with decreasing the sputtering pressure, and it also showed a pronounced position dependence. The poly-Si formed by Al-induced crystallization method on the AZO film was found to be almost <100>-oriented, differently from our prediction. The performance of the AZO film as an anti-reflection coating on BaSi 2 was also evaluated at a wavelength of 600 nm.
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