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Singlet oxygen inhibits nonradiative defects in porous silicon

✍ Scribed by Pikulev, V. B. ;Kuznetsov, S. N. ;Kuznetsov, A. S. ;Saren, A. A. ;Gurtov, V. A.

Book ID: 105365232
Publisher: John Wiley and Sons
Year: 2009
Tongue: English
Weight: 290 KB
Volume: 206
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200881055

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✦ Synopsis

Abstract

Experimental evidences are presented for the first time that singlet oxygen generated ex situ acts as an inhibitor of nonradiative recombination in porous silicon (PSi). This effect is observed on a pristine PSi as well as on degraded porous layers quenched by ozone adsorption. A photoluminescence (PL) enhancement produced by singlet oxygen is accompanied with only slight oxidation of a PSi. We assume that the observed effect on PL efficiency is due to gentle selective oxidation of single defects on silicon nanocrystal surface. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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