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Single Pulse Laser-Induced Phase Transitions of PLD-Deposited Ge 2 Sb 2 Te 5 Films

✍ Scribed by Lu, Hongbing; Thelander, Erik; Gerlach, Jürgen W.; Decker, Ulrich; Zhu, Benpeng; Rauschenbach, Bernd

Book ID: 120281917
Publisher: John Wiley and Sons
Year: 2013
Tongue: English
Weight: 694 KB
Volume: 23
Category: Article
ISSN: 1616-301X
DOI: 10.1002/adfm.201202665

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## Abstract Four Ge~2~Sb~2~Te~5~ thin films were prepared by pulsed laser deposition (PLD) at 58, 100, 140, and 190 mJ/pulse laser energy, respectively. The influence of laser energy on the crystallization of Ge~2~Sb~2~Te~5~ was investigated. The result shows that laser energy has evident effect on