Advantages of thin single-photon avalanc
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Tan, S. L. ;Ong, D. S. ;Yow, H. K.
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Article
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2007
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John Wiley and Sons
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English
β 187 KB
## Abstract The breakdown characteristics and timing jitter of thin and thick GaAs singleβphoton avalanche diodes are analyzed using a random ionization path length model. The larger relative dead space in thin devices is found to increase the sharpness of breakdown probability curves. Thin devices