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Statistics of Avalanche Current Buildup Time in Single-Photon Avalanche Diodes

✍ Scribed by Tan, C.H.; Ng, J.S.; Rees, G.J.; David, J.P.R.

Book ID
114570375
Publisher
IEEE
Year
2007
Tongue
English
Weight
199 KB
Volume
13
Category
Article
ISSN
1077-260X

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## Abstract The breakdown characteristics and timing jitter of thin and thick GaAs single‐photon avalanche diodes are analyzed using a random ionization path length model. The larger relative dead space in thin devices is found to increase the sharpness of breakdown probability curves. Thin devices