Single-/multiband CMOS low-noise amplifier using concentric switching inductors

✍ Scribed by Ruey-Lue Wang; Shih-Chih Chen; Cheng-Lin Huang

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 356 KB
• Volume: 54
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.26591

✦ Synopsis

Abstract

In this article, a low‐noise amplifier (LNA) using concentric switching inductors were designed and measured. A voltage supply is fed through the switching inductors. The presented circuit is a modified cascoded amplifier configuration which input stage is a common‐gate structure. The switching inductors are implemented by three series‐wound concentric planar spiral inductors associated with two PMOSFET switches. According to on or off state of two PMOSFET switches, the circuit has theoretically four transfer characteristics, including one single‐band, two dual‐band, and one triple‐band frequency responses. For the LNA, using the concentric‐type switching inductors, the simulated and measured gains are nearly more than 12 and 10 dB at all operation frequency bands, respectively. The measured reflection coefficients are almost less than −10 dB at all operation frequency bands. The measured minimum noise figures are almost less than 4.5 dB at all operation frequency bands. The power consumption is 9 mW. The chip size is 1.03 × 1.04 mm^2^. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:309–315, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26591