Single-electron tunneling in granular Ag–SiO2films
✍ Scribed by M. Fujii; T. Kita; K. Yamamoto; S. Hayashi
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 68 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0749-6036
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✦ Synopsis
Current transport properties of thin Ag-SiO 2 granular films were studied. In spite of very simple device structures (i.e., just sandwiching the granular film with Al electrodes), clear Coulomb blockade and Coulomb staircase structures were observed in the current-voltage (I -V ) characteristics. The observed I -V characteristics were qualitatively explained by a double-barrier and a triple-barrier tunnel-junction model.
📜 SIMILAR VOLUMES
We studied resistivity, magnetoresistivity and magnetization in granular Fe-SiO 2 films. In the hopping region, magnetoresistance was found to be as large as -5%, and is isotropic for different measurement geometry, which is the signature of giant magnetoresistance due to a spin-dependent conduction