Single-electron transistor probes two-dimensional electron system in the quantum Hall regime
β Scribed by J. Weis; Y.Y. Wei; K.v. Klitzing
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 491 KB
- Volume
- 47
- Category
- Article
- ISSN
- 0167-9317
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π SIMILAR VOLUMES
A recent mean-field approach to the fractional quantum Hall effect (QHE) is reviewed, with a special emphasis on the application to single-electron tunneling through a quantum dot in a high magnetic field. The theory is based on the adiabatic principle of Greiter and Wilczek, which maps an incompres
A metal single-electron transistor (SET) has been fabricated on top of a GaAs=AlGaAs Hall-bar mesa containing a two-dimensional electron system (2DES). The chemical potential variations of the 2DES with applied magnetic ΓΏeld are sensitively measured by the SET.