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Single-electron devices formed by pattern-dependent oxidation: microscopic structural evaluation

โœ Scribed by M. Nagase; S. Horiguchi; A. Fujiwara; Y. Ono; K. Yamazaki; H. Namatsu; Y. Takahashi


Book ID
108417626
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
284 KB
Volume
190
Category
Article
ISSN
0169-4332

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Novel quantum nano-structures which consist of quantum dots connected with quantum wires through tunneling barriers ลฝ . have successfully been fabricated using selective area metalorganic vapor phase epitaxy SA-MOVPE and have been ลฝ . applied to form single electron devices. GaAsrAlGaAs modulation d