Self-formed quantum nano-structures by selective area MOVPE and their application to GaAs single electron devices
✍ Scribed by F Nakajima; J Motohisa; T Fukui
- Book ID
- 104309232
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 537 KB
- Volume
- 162-163
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
✦ Synopsis
Novel quantum nano-structures which consist of quantum dots connected with quantum wires through tunneling barriers Ž . have successfully been fabricated using selective area metalorganic vapor phase epitaxy SA-MOVPE and have been Ž . applied to form single electron devices. GaAsrAlGaAs modulation doped heterostructures are grown on a GaAs 001 Ž . substrate partially masked with SiNx. A quasi-1 dimensional electron gas Q-1DEG is formed in a narrow wire-like opening, which has two prominences and a dent to modulate the channel width. From the transport properties, we confirm that a quantum dot and quantum wires connected through tunneling barriers, that is, a single electron transistor structure, is naturally formed in the part of the channel with modulated width. We will discuss the mechanism by which the dot and tunnel barriers are formed by SA-MOVPE.