✦ LIBER ✦

Single-electron charging effect in individual Si nanocrystals

✍ Scribed by T. Baron; P. Gentile; N. Magnea; P. Mur

Book ID: 121675073
Publisher: American Institute of Physics
Year: 2001
Tongue: English
Weight: 405 KB
Volume: 79
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1392302

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Single electron charging in Si nanocryst

Single electron charging in Si nanocrystals embedded in silicon-rich oxide

✍ Yu, Zhenrui; Aceves, Mariano; Carrillo, Jesus; Flores, Francisco 📂 Article 📅 2003 🏛 Institute of Physics 🌐 English ⚖ 154 KB

Single-Electron Charging and Discharging

Single-Electron Charging and Discharging Analyses in Ge-Nanocrystal Memories

✍ de Sousa, J.S.; Peibst, R.; Erenburg, M.; Bugiel, E.; Farias, G.A.; Leburton, J. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 664 KB

Carrier charging effect of V3Si nanocrys

Carrier charging effect of V3Si nanocrystals floating gate memory structure

✍ Dongwook Kim; Dong Uk Lee; Hyo Jun Lee; Eun Kyu Kim 📂 Article 📅 2012 🏛 Elsevier Science 🌐 English ⚖ 955 KB

Detection and Classification of Single-E

Detection and Classification of Single-Electron Jumps in Si Nanocrystal Memories

✍ Pace, C.; Giusi, G.; Crupi, F.; Lombardo, S.A. 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 394 KB

Observation of single-electron charging

Observation of single-electron charging effect in NbN submicron bridges

✍ X. Chen; N. Yoshikawa; M. Sugahara 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 138 KB

Submicron NbN bridges whose thickness, width and length are 10nm, 100nm and 100-300nm respectively, have been fabricated, and their conduction properties and electrical field effect are measured. The samples having resistances larger than -l()()k~ exhibit nonlinear I-V characteristics with offset vo

Carrier conduction in a Si-nanocrystal-b

Carrier conduction in a Si-nanocrystal-based single-electron transistor-II. Effect of drain bias

✍ Y. Fu; M. Willander; A. Dutta; S. Oda 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 264 KB

We have successfully fabricated a single-electron transistor based on undoped Si nanocrystals having radii of approximately 3-5 nm. The energy band structure of the Si dot consists of a set of discrete sublevels and a quasi-continuous band. By self-consistently solving the 3D Schrödinger and Poisson