Observation of single-electron charging effect in NbN submicron bridges

✍ Scribed by X. Chen; N. Yoshikawa; M. Sugahara

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 138 KB
• Volume: 194-196
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(94)91338-2

✦ Synopsis

Submicron NbN bridges whose thickness, width and length are 10nm, 100nm and 100-300nm respectively, have been fabricated, and their conduction properties and electrical field effect are measured. The samples having resistances larger than -l()()k~ exhibit nonlinear I-V characteristics with offset voltage of 2mV-12mV at 4.2K which are obviously similar to those of the single-electron charging effect in small tunnel junction arrays. The field effect modulation of the j unction conductance is observed by applying a voltage to a gate electrode which is made over the NbN bridge. These charging effects are thought to arise from the granular structure of NbN bridges.The simulation result using one-dimensional SET junction arrays coincide well with experimental result.